%0 Journal Article
%T DEFECTS ETCHING PITS OBSERVATIONS AND ANALYSES ON EPITAXIAL SILICON CLEAVAGE SURFACE<br>硅外延层解理面缺陷腐蚀坑的观察及初步分析
%A CAI TIAN-HAI
%A <br>蔡田海
%J 物理学报
%D 1980
%I 
%X In this paper results of observation using the Wright etchent on epitaxial silicon (111) cleavage surface are described. On silicon cleavage surface the etehent reveals stacking faults, dislocations, S-pits and other etch pits. Some of the buried stacking faults are also observed.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=66390E89CF2F7C70F332FFE51E7D4398&yid=E56875464B1C0EC1&vid=771469D9D58C34FF&iid=0B39A22176CE99FB&sid=FDC7AF55F77D8CD4&eid=1A363081E1FF7014&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0