EXPERIMENTAL INVESTIGATION OF THE DISTRIBUTION OF DEFECTS CAUSED BY HYDROGEN IN SILICON SINGLE CRYSTALS
硅单晶氢致缺陷分布的实验研究

Distribution of defects caused by hydrogen in silicon single crystals is investigated by means of X-ray projection topography. It has been observed that the defect density and its size in new exposure surface area are similar to those in the crystal interior, which are different from those observed in thin wafer. These results are discussed briefly.