%0 Journal Article
%T EXPERIMENTAL INVESTIGATION OF THE DISTRIBUTION OF DEFECTS CAUSED BY HYDROGEN IN SILICON SINGLE CRYSTALS<br>硅单晶氢致缺陷分布的实验研究
%A HE XIAN-CHANG
%A <br>何贤昶
%J 物理学报
%D 1984
%I 
%X Distribution of defects caused by hydrogen in silicon single crystals is investigated by means of X-ray projection topography. It has been observed that the defect density and its size in new exposure surface area are similar to those in the crystal interior, which are different from those observed in thin wafer. These results are discussed briefly.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=5C4ACED68D215131173098EAFF669ED6&yid=36250D1D6BDC99BD&vid=27746BCEEE58E9DC&iid=94C357A881DFC066&sid=D02611D1F8166C9A&eid=08B2E838F29A693A&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0