|
|
物理学报 1981
A PROPOSAL OF DOUBLE HETEROJUNCTION DOUBLE DRIFT-REGION InP/InGaAsP/InP AVALANCHE DIODE
|
Abstract:
In this article, a double heterojunction double drift-region InP/InGaAsP/InP avalanche diode is proposed. The analysis manifests: the voltage madulation depth is 100% corresponding to efficiency of 64%. The small signal theory analysis of the device impedance is also given.
