%0 Journal Article
%T A PROPOSAL OF DOUBLE HETEROJUNCTION DOUBLE DRIFT-REGION InP/InGaAsP/InP AVALANCHE DIODE<br>双异质结双漂移区InP/InGaAsP/InP微波雪崩二极管的设想
%A YANG YU-FEN
%A <br>杨玉芬
%J 物理学报
%D 1981
%I 
%X In this article, a double heterojunction double drift-region InP/InGaAsP/InP avalanche diode is proposed. The analysis manifests: the voltage madulation depth is 100% corresponding to efficiency of 64%. The small signal theory analysis of the device impedance is also given.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=E5885139F31EC9C252522AFF398F7DD6&yid=AA64127AB7DEB65D&vid=340AC2BF8E7AB4FD&iid=B31275AF3241DB2D&sid=89FA2FA9891FF61E&eid=0018E43E61963A72&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0