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OALib Journal期刊
ISSN: 2333-9721
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Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors
ZnO纳米线场效应管的制备及光电特性

Keywords: ZnO nanowire,back-gate,suspended,field-effect transistor,ultraviolet radiation
ZnO纳米线,背栅,悬浮,场效应晶体管,紫外特性

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Abstract:

The fabrication and photoelectrical characteristics of suspended ZnO nanowire (NW) field-effect transistors (FETs) are presented. Single-crystal ZnO NWs are synthesized by a hydrothermal method. The fabricated FETs exhibit excellent performance. When Vds

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