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半导体学报 2009
Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors
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Abstract:
The fabrication and photoelectrical characteristics of suspended ZnO nanowire (NW) field-effect transistors (FETs) are presented. Single-crystal ZnO NWs are synthesized by a hydrothermal method. The fabricated FETs exhibit excellent performance. When Vds