%0 Journal Article
%T Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors<br>ZnO纳米线场效应管的制备及光电特性
%A Fu Xiaojun
%A Zhang Haiying
%A Guo Changxin
%A Xu Jingbo
%A Li Ming
%A <br>付晓君
%A 张海英
%A 郭常新
%A 徐静波
%A 黎明
%J 半导体学报
%D 2009
%I 
%X The fabrication and photoelectrical characteristics of suspended ZnO nanowire (NW) field-effect transistors (FETs) are presented. Single-crystal ZnO NWs are synthesized by a hydrothermal method. The fabricated FETs exhibit excellent performance. When Vds
%K ZnO nanowire
%K back-gate
%K suspended
%K field-effect transistor
%K ultraviolet radiation<br>ZnO纳米线，背栅，悬浮，场效应晶体管，紫外特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=59D74A62AC758825C1CBC18E1C1F11B0&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=5D311CA918CA9A03&sid=A5A2203BC075349C&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=12