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半导体学报 2010
Size-independent growth of pure zinc blende GaAs nanowires
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Abstract:
Pure zinc blende GaAs nanowires were grown by metal organic chemical vapor deposition on GaAs (111) B substrates via Au catalyzed vapor-liquid-solid mechanism. We found that the grown nanowires are rod-like in shape and have a pure zinc blende structure; moreover, the growth rate is independent on its diameters. It can be concluded that, direct impingement of vapor species onto the Au--Ga droplets contributes to the growth of the nanowire; in contrast, the adatom diffusion makes little contribution. The results indicate that the droplet acts as a catalyst rather than an adatom collector, larger diameter and high supersatuation in the droplet leads to the pure zinc blende structure of the nanowire.