%0 Journal Article
%T Size-independent growth of pure zinc blende GaAs nanowires<br>纯闪锌矿结构GaAs纳米线的等高生长研究
%A Ye Xian
%A Huang Hui
%A Guo Jingwei
%A Ren Xiaomin
%A Huang Yongqing
%A Wang Qi
%A <br>叶显
%A 黄辉
%A 郭经纬
%A 任晓敏
%A 黄永清
%A 王琦
%J 半导体学报
%D 2010
%I 
%X Pure zinc blende GaAs nanowires were grown by metal organic chemical vapor deposition on GaAs (111) B substrates via Au catalyzed vapor-liquid-solid mechanism. We found that the grown nanowires are rod-like in shape and have a pure zinc blende structure; moreover, the growth rate is independent on its diameters. It can be concluded that, direct impingement of vapor species onto the Au--Ga droplets contributes to the growth of the nanowire; in contrast, the adatom diffusion makes little contribution. The results indicate that the droplet acts as a catalyst rather than an adatom collector, larger diameter and high supersatuation in the droplet leads to the pure zinc blende structure of the nanowire.
%K GaAs nanowire
%K supersatuation
%K pure zinc blende structure
%K metalorganic chemical vapor deposition<br>GaAs纳米线
%K 过饱和度
%K 纯闪锌矿结构
%K 金属有机化学沉淀法
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FE533388021F7CE914FA706693DD78F4&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=DF92D298D3FF1E6E&sid=758AB891BAD7F94F&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0