Optimization of Al2O3/SiNx stacked antireflection structures for N-type surface-passivated crystalline silicon solar cells
N型表面钝化晶体硅太阳电池Al2O3/SiNx减反射叠层的优化研究

In the case of the N-type solar cells, the anti-reflection property, as one of the important factors to further improve the energy-conversion efficiency, has been optimized using a stacked Al2O3/SiNx layers. The effect of the layer thickness of the SiNx layer on the surface reflection property was systematically studied in terms of both experimental and theoretical measurement. In the stacked Al2O3/SiNx layers, results demonstrated that the surface reflection property can be effectively optimized when adding a SiNx layer, leading to the improvement in the final photovoltaic characteristic for the N-type solar cells.