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Noise performance in AlGaN/GaN HEMTs under high drain bias
高漏偏压下AlGaN/GaN HEMT噪声性能的研究

Keywords: GaN HEMT,noise performance,high drain bias,high electric field,impact ionization
GaN
,HEMT,噪声性能,高漏偏压,强电场,碰撞电离

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Abstract:

The advent of fully integrated GaN PA-LNA circuits makes it meaningful to investigate the noise performance under high drain bias. However, noise performance of AlGaN/GaN HEMTs under high bias has not received worldwide attention in theoretical studies du

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