%0 Journal Article
%T Noise performance in AlGaN/GaN HEMTs under high drain bias<br>高漏偏压下AlGaN/GaN HEMT噪声性能的研究
%A Pang Lei
%A Pu Yan
%A Liu Xinyu
%A Wang Liang
%A Liu Jian
%A <br>庞磊
%A 蒲颜
%A 刘新宇
%A 王亮
%A 刘键
%J 半导体学报
%D 2009
%I 
%X The advent of fully integrated GaN PA-LNA circuits makes it meaningful to investigate the noise performance under high drain bias. However, noise performance of AlGaN/GaN HEMTs under high bias has not received worldwide attention in theoretical studies du
%K GaN HEMT
%K noise performance
%K high drain bias
%K high electric field
%K impact ionization<br>GaN
%K HEMT
%K 噪声性能
%K 高漏偏压
%K 强电场
%K 碰撞电离
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A064D1E2DA10B1D6A4F6E372F1C780A1&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=5D311CA918CA9A03&sid=9140831687AF2A1E&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13