A new SOI high voltage device based on E-SIMOX substrate
一种新的基于E-SIMOX衬底的SOI高压器件

A new NI(n~+ charge islands) high voltage device structure based on E-SIMOX(epitaxy-the separation by implantation of oxygen) substrate is proposed.It is characterized by equidistant high concentration n~+-regions on the top interface of the dielectric buried layer.Inversion holes caused by the vertical electric field(E_V) are located in the spacing of two neighboring n~+-regions on the interface by the force from lateral electric field(E_L) and the compositive operation of Coulomb's forces with the ionized...