%0 Journal Article
%T A new SOI high voltage device based on E-SIMOX substrate<br>一种新的基于E-SIMOX衬底的SOI高压器件
%A Wu Lijuan
%A Hu Shengdong
%A Zhang Bo
%A Li Zhaoji
%A <br>吴丽娟
%A 胡盛东
%A 张波
%A 李肇基
%J 半导体学报
%D 2010
%I 
%X A new NI(n~+ charge islands) high voltage device structure based on E-SIMOX(epitaxy-the separation by implantation of oxygen) substrate is proposed.It is characterized by equidistant high concentration n~+-regions on the top interface of the dielectric buried layer.Inversion holes caused by the vertical electric field(E_V) are located in the spacing of two neighboring n~+-regions on the interface by the force from lateral electric field(E_L) and the compositive operation of Coulomb's forces with the ionized...
%K E-SIMOX
%K charge islands
%K breakdown voltage
%K interface charges
%K ENDIF<br>E-SIMOX
%K 电荷岛
%K 击穿电压
%K 界面电荷
%K ENDIF
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=618265CF2CF43D324BE8CBB6EC8BEEAB&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=E158A972A605785F&sid=327EC63DEB9FC7E6&eid=B31275AF3241DB2D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1