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半导体学报 2010
Pressure influence on bound polarons in a strained wurtzite GaN/AlxGa1-xN heterojunction under an electric field
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Abstract:
The binding energies of bound polarons near the interface of a strained wurtzite GaN/Al_xGa_(1-x)N het-erojunction are studied by using a modified LLP variational method and a simplified coherent potential approximation under hydrostatic pressure and an external electric field.Considering the biaxial strain due to lattice mismatch or epitaxial growth,the uniaxial strain effects and the influences of the electron-phonon interaction as well as impurity-phonon interaction including the effects of interface-opt...