%0 Journal Article
%T Pressure influence on bound polarons in a strained wurtzite GaN/AlxGa1-xN heterojunction under an electric field<br>电场下应变纤锌矿GaN/AlxGa1-xN异质结中束缚极化子的压力效应
%A Zhang Min
%A Ban Shiliang
%A <br>张敏
%A 班士良
%J 半导体学报
%D 2010
%I 
%X The binding energies of bound polarons near the interface of a strained wurtzite GaN/Al_xGa_(1-x)N het-erojunction are studied by using a modified LLP variational method and a simplified coherent potential approximation under hydrostatic pressure and an external electric field.Considering the biaxial strain due to lattice mismatch or epitaxial growth,the uniaxial strain effects and the influences of the electron-phonon interaction as well as impurity-phonon interaction including the effects of interface-opt...
%K bound polaron
%K strained wurtzite heterojunction
%K pressure
%K electric field<br>束缚极化子
%K 应变纤锌矿异质结
%K 压力
%K 电场
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4367782869AB509D99B68975C60EDD98&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=94C357A881DFC066&sid=71E7E5DF8CD408F1&eid=DF92D298D3FF1E6E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1