Reducing the influence of STI on SONOS memory through optimizing added boron implantation technology
通过优化额外的硼注入工艺减小STI对SONOS存储器的影响

The influence of shallow trench isolation(STI) on a 90 nm polysilicon-oxide-nitride-oxide-silicon structure non-volatile memory has been studied based on experiments.It has been found that the performance of edge memory cells adjacent to STI deteriorates remarkably.The compressive stress and boron segregation induced by STI are thought to be the main causes of this problem.In order to mitigate the STI impact,an added boron implantation in the STI region is developed as a new solution.Four kinds of boron imp...