%0 Journal Article
%T Reducing the influence of STI on SONOS memory through optimizing added boron implantation technology<br>通过优化额外的硼注入工艺减小STI对SONOS存储器的影响
%A Xu Yue
%A Yan Feng
%A Li Zhiguo
%A Yang Fan
%A Wang Yonggang
%A Chang Jianguang
%A <br>徐跃
%A 闫锋
%A 李志国
%A 杨帆
%A 王永刚
%A 常建光
%J 半导体学报
%D 2010
%I 
%X The influence of shallow trench isolation(STI) on a 90 nm polysilicon-oxide-nitride-oxide-silicon structure non-volatile memory has been studied based on experiments.It has been found that the performance of edge memory cells adjacent to STI deteriorates remarkably.The compressive stress and boron segregation induced by STI are thought to be the main causes of this problem.In order to mitigate the STI impact,an added boron implantation in the STI region is developed as a new solution.Four kinds of boron imp...
%K shallow trench isolation
%K compressive stress
%K boron segregation
%K added boron implantation<br>浅沟槽隔离
%K 压应力
%K 硼析出
%K 额外硼注入
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2D676623C934C52CD718BE3D3A9883D8&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=9CF7A0430CBB2DFD&sid=72D184EC37A57FC0&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0