Unipolar resistive switching of Au+-implanted ZrO2 films
金离子注入二氧化锆薄膜的单极电阻转变特性研究

The resistive switching characteristics of Au+-implanted ZrO2 films are investigated. The Au/Cr/Au+-implanted-ZrO2/n+-Si sandwiched structure exhibits reproducible unipolar resistive switching behavior. After 200 write-read-erase-read cycles, the resistance ratio between the high and low resistance states is more than 180 at a readout bias of 0.7 V. Additionally, the Au/Cr/Au+-implanted-ZrO2/n+-Si structure shows good retention char-acteristics and nearly 100% device yield. The unipolar resistive switching behavior is due to changes in the film conductivity related to the formation and rupture of conducting filamentary paths, which consist of implanted Au ions.