%0 Journal Article
%T Unipolar resistive switching of Au+-implanted ZrO2 films<br>金离子注入二氧化锆薄膜的单极电阻转变特性研究
%A Liu Qi
%A Long Shibing
%A Guan Weihu
%A Zhang Sen
%A Liu Ming
%A Chen Junning
%A <br>刘琦
%A 龙世兵
%A 管伟华
%A 张森
%A 刘明
%A 陈军宁
%J 半导体学报
%D 2009
%I 
%X The resistive switching characteristics of Au+-implanted ZrO2 films are investigated. The Au/Cr/Au+-implanted-ZrO2/n+-Si sandwiched structure exhibits reproducible unipolar resistive switching behavior. After 200 write-read-erase-read cycles, the resistance ratio between the high and low resistance states is more than 180 at a readout bias of 0.7 V. Additionally, the Au/Cr/Au+-implanted-ZrO2/n+-Si structure shows good retention char-acteristics and nearly 100% device yield. The unipolar resistive switching behavior is due to changes in the film conductivity related to the formation and rupture of conducting filamentary paths, which consist of implanted Au ions.
%K RRAM
%K resistive switching
%K ion implantation
%K ZrO2<br>RRAM
%K 电阻转变
%K 离子注入
%K ZrO2
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=68148AD8BB7A776A139F443E07D49CF7&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=E158A972A605785F&sid=C2AAC319E6E70BD9&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0