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半导体学报 2009
Acharge allocating model for the breakdown voltage calculation and optimization of the lateral RESURF devices
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Abstract:
A new quite simple analytical model based on the charge allocating approach has been proposed to describe the breakdown property of the RESURF(reduced surface field) structure.It agrees well with the results of numerical simulation on predicting the breakdown voltage.Compared with the latest published analytical model,this model has a better accuracy according to the numerical simulation with simpler form.The optimal doping concentration(per unit area) of the epi-layer of the RESURF structures with differen...