%0 Journal Article
%T Acharge allocating model for the breakdown voltage calculation and optimization of the lateral RESURF devices<br>用于横向RESURF器件击穿电压优化的电荷分配模型
%A Li Xiaogang
%A Feng Zhicheng
%A Zhang Zhengyuan
%A Hu Mingyu
%A <br>李小刚
%A 冯志成
%A 张正元
%A 胡明雨
%J 半导体学报
%D 2009
%I 
%X A new quite simple analytical model based on the charge allocating approach has been proposed to describe the breakdown property of the RESURF(reduced surface field) structure.It agrees well with the results of numerical simulation on predicting the breakdown voltage.Compared with the latest published analytical model,this model has a better accuracy according to the numerical simulation with simpler form.The optimal doping concentration(per unit area) of the epi-layer of the RESURF structures with differen...
%K RESURF devices
%K analytical model
%K breakdown voltage
%K device optimization<br>RESURF器件，解析模型，击穿电压，器件优化
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2B09BD3775169AE9AC5CD5B6EA5A18D4&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=38B194292C032A66&sid=B9AA7F0EDC1BFEE1&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0