Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment
F注入AlGaN/GaN增强型HEMT

The fabrication of enhancement-mode AlGaN/GaN HEMTs by fluorine plasma treatment on sapphire substrates is reported.A new method is used to fabricate devices with different fluorine plasma RF power treatments on one wafer to avoid differences between different wafers.The plasma-treated gate regions of devices treated with different fluorine plasma RF powers were separately opened by a step-and-repeat system.The properties of these devices are compared and analyzed.The devices with 150 W fluorine plasma trea...