%0 Journal Article
%T Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment<br>F注入AlGaN/GaN增强型HEMT
%A Quan Si
%A Hao Yue
%A Ma Xiaohu
%A Xie Yuanbin
%A Ma Jigang
%A <br>全思
%A 郝跃
%A 马晓华
%A 谢元斌
%A 马骥刚
%J 半导体学报
%D 2009
%I 
%X The fabrication of enhancement-mode AlGaN/GaN HEMTs by fluorine plasma treatment on sapphire substrates is reported.A new method is used to fabricate devices with different fluorine plasma RF power treatments on one wafer to avoid differences between different wafers.The plasma-treated gate regions of devices treated with different fluorine plasma RF powers were separately opened by a step-and-repeat system.The properties of these devices are compared and analyzed.The devices with 150 W fluorine plasma trea...
%K high electron mobility transistors
%K AlGaN/GaN
%K ?uorine plasma treatment
%K threshold voltage<br>高电子迁移率器件，AlGaN/GaN，F等离子处理，阈值电压
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1B6A30FFA34216356A94F927D5256775&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=59906B3B2830C2C5&sid=7BA533019CBD9DDA&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0