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The Electro-Thermal Sub Circuit Model for Power Mosfets

DOI: 10.5923/j.msse.20120102.02

Keywords: Device Characterization, Device Modeling, High Power Discrete Devices, Modeling, MOS Device, Power Semiconductor Devices, Semiconductor Devices, Simulation, Thermal Design, Spice

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Abstract:

An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macro-model implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model[2,3] is highly accurate and is recognized in the industry. The sequence of the model calibration procedure using parametric data is described. Simulation response of the new self-heating MOSFET model track the dynamic thermal response and is independent of SPICE’s global temperature definition.

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