%0 Journal Article
%T The Electro-Thermal Sub Circuit Model for Power Mosfets
%J Microelectronics and Solid State Electronics
%@ 2324-6456
%D 2012
%I 
%R 10.5923/j.msse.20120102.02
%X An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macro-model implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model[2,3] is highly accurate and is recognized in the industry. The sequence of the model calibration procedure using parametric data is described. Simulation response of the new self-heating MOSFET model track the dynamic thermal response and is independent of SPICE¡¯s global temperature definition.
%K Device Characterization
%K Device Modeling
%K High Power Discrete Devices
%K Modeling
%K MOS Device
%K Power Semiconductor Devices
%K Semiconductor Devices
%K Simulation
%K Thermal Design
%K Spice
%U http://article.sapub.org/10.5923.j.msse.20120102.02.html