Long Term Transients in MOSFET 1/f Noise with Switched Bias

Long term time dependent transients in l/f noise have been observed and are reported on NMOS transistors operating with switched gate bias. The results are interpreted as a modification of the time dependence of random telegraph signals. The results have important implications in the understanding of the nature of l/f noise and in the understanding the effect of l/f noise in switched capacitor and RF circuits with large amplitude switching gate voltages.