%0 Journal Article
%T Long Term Transients in MOSFET 1/f Noise with Switched Bias
%A M.Y. Louie and L. Forbes
%J The Open Electrical & Electronic Engineering Journal
%D 2007
%I Bentham Open
%R 10.2174/1874129000701010051]
%X Long term time dependent transients in l/f noise have been observed and are reported on NMOS transistors operating with switched gate bias. The results are interpreted as a modification of the time dependence of random telegraph signals. The results have important implications in the understanding of the nature of l/f noise and in the understanding the effect of l/f noise in switched capacitor and RF circuits with large amplitude switching gate voltages.
%U http://www.benthamscience.com/open/toeej/articles/V001/51TOEEJ.htm