In this work, a modeling study of CsSn0.50Ge0.50I3 perovskite-based photovoltaic devices has been carried out. The study highlights the influence of geometric parameters such as the diffusion length of minority carriers and the thickness of the absorber layer on the solar cell performance. A thin ZnO film is used as the transport window layer while a Cu2O or de NiO film plays the role of buffer layer. The ZnO(n+)/Cu2O(n)/CsSn0.50Ge0.50I3(p) and ZnO(n+)/NiO(n)/CsSn0.50Ge0.50I3(p) photovoltaic structures modeled show internal quantum efficiencies of 51.3% and 72.6%, respectively. For the Cu2O buffer layer, an increase in the internal quantum efficiency from 46.1% to 51.3% and from 45.7% to 52.3% have been observed when varying the CsSn0.50Ge0.50I3 perovskite layer thickness and the minority carrier diffusion length, respectively. For the NiO buffer layer, on the other hand, the quantum efficiency increases from 58.9% to 72.6% for the perovskite layer thickness variation and from 56.2% to 75% for the minority carrier diffusion length variation.
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