|
|
Modern Physics 2026
单层MoS2生长机理及光电性能的研究
|
Abstract:
本文采用盐辅助化学气相沉积法，以MoO3、S为前驱体，NaCl为生长促进剂，在SiO2/Si衬底上成功制备了单层二硫化钼。系统研究了反应物位置、载气流量等工艺参数对MoS2生长形貌的影响，发现当N2流量为150 sccm时，可获得尺寸超过50 μm的大面积单层MoS2三角形岛状结构。通过拉曼光谱、扫描电子显微镜和原子力显微镜对材料质量进行表征，结果表明所制备的MoS2为单层结构，厚度约0.83 nm，但局部存在由衬底残留物或成核缺陷引起的纳米“帐篷”结构，导致局部应变和双层区域的出现。进一步基于单层MoS2构筑了光电器件，器件在532 nm激光照射下表现出优异的光电性能：光暗电流比接近103，响应时间快至微秒级(上升时间12 μs，下降时间85 μs)，响应率最高可达63.4 mA/W。研究表明，盐辅助CVD法生长的单层MoS2在高速光电探测领域具有良好应用前景。
In this paper, monolayer molybdenum disulfide was successfully synthesized on SiO2/Si substrates via the salt-assisted chemical vapor deposition (CVD) method, using MoO3 and S as precursors and NaCl as a growth promoter. The effects of process parameters such as reactant position and carrier gas flow rate on the growth morphology of MoS2 were systematically investigated. It was found that large-area triangular island structures of monolayer MoS2 with sizes exceeding 50 μm could be obtained at a N2 flow rate of 150 sccm. The material quality was characterized by Raman spectroscopy, scanning electron microscopy and atomic force microscopy. The results demonstrate that the as-prepared MoS2 exhibits a monolayer structure with a thickness of approximately 0.83 nm. However, local nano-“tent” structures induced by substrate residues or nucleation defects exist, leading to local strain and the formation of bilayer regions. Furthermore, optoelectronic devices were constructed based on the monolayer MoS2, which exhibit excellent photoelectric performance under 532 nm laser irradiation: the photocurrent-to-dark-current ratio is close to 103, the response time is as fast as the microsecond level (rise time 12 μs, decay time 85 μs), and the maximum responsivity reaches up to 63.4 mA/W. This study suggests that monolayer MoS2 grown by the salt-assisted CVD method holds promising application prospects in the field of high-speed photodetection.
| [1] | Bisen, O.Y., Atif, S., Mallya, A. and Nanda, K.K. (2022) Self-Assembled TMD Nanoparticles on N-Doped Carbon Nanostructures for Oxygen Reduction Reaction and Electrochemical Oxygen Sensing Thereof. ACS Applied Materials & Interfaces, 14, 5134-5148. https://doi.org/10.1021/acsami.1c11300 |
| [2] | Jian, J., Dong, P., Jian, Z., Zhao, T., Miao, C., Chang, H., et al. (2022) Ultralow-Power RRAM with a High Switching Ratio Based on the Large Van Der Waals Interstice Radius of TMDs. ACS Nano, 16, 20445-20456. https://doi.org/10.1021/acsnano.2c06728 |
| [3] | Bozheyev, F. and Ellmer, K. (2022) Thin Film Transition Metal Dichalcogenide Photoelectrodes for Solar Hydrogen Evolution: A Review. Journal of Materials Chemistry A, 10, 9327-9347. https://doi.org/10.1039/d2ta01108e |
| [4] | Baidoo, J.K., Choi, S.H., Agyapong-Fordjour, F.O., Boandoh, S., Yun, S.J., Adofo, L.A., et al. (2022) Sequential Growth of Vertical Transition-Metal Dichalcogenide Heterostructures on Rollable Aluminum Foil. ACS Nano, 16, 8851-8859. https://doi.org/10.1021/acsnano.1c10233 |
| [5] | Garcia-Esparza, A.T., Park, S., Abroshan, H., Paredes Mellone, O.A., Vinson, J., Abraham, B., et al. (2022) Local Structure of Sulfur Vacancies on the Basal Plane of Monolayer MoS2. ACS Nano, 16, 6725-6733. https://doi.org/10.1021/acsnano.2c01388 |
| [6] | Yang, X., Zheng, X., Liu, Q., Zhang, T., Bai, Y., Yang, Z., et al. (2020) Experimental Study on Thermal Conductivity and Rectification in Suspended Monolayer MoS2. ACS Applied Materials & Interfaces, 12, 28306-28312. https://doi.org/10.1021/acsami.0c07544 |
| [7] | Li, X., Zhang, Z., Gao, T., Shi, X., Gu, C. and Wu, Y. (2022) Van Der Waals Epitaxial Trilayer MoS2 Crystals for High‐Speed Electronics. Advanced Functional Materials, 32, Article ID: 2208091. https://doi.org/10.1002/adfm.202208091 |
| [8] | 王晨, 王承浩, 王琦, 成丁尔, 张大伟. 二氧化钒薄膜制备工艺及其在开关器件的应用研究进展[J]. 光学仪器, 2021, 43(3): 78-85+94. |
| [9] | 谢明章, 李留猛, 李明, 叶艳, 张金中, 姜凯, 商丽燕, 胡志高, 褚君浩. 脉冲激光沉积法制备的单层MoS2薄膜变温光响应研究(英文) [J]. 红外与毫米波学报, 2021, 40(3): 302-307. |
| [10] | Kumar, K. and Kaur, D. (2024) A Review on Recent Advancements in the Growth of MoS2 Based Flexible Photodetectors. Solar Energy Materials and Solar Cells, 268, Article ID: 112736. https://doi.org/10.1016/j.solmat.2024.112736 |
| [11] | Li, X. and Zhu, H. (2015) Two-Dimensional MoS2: Properties, Preparation, and Applications. Journal of Materiomics, 1, 33-44. https://doi.org/10.1016/j.jmat.2015.03.003 |
| [12] | Ling, Z.P., Yang, R., Chai, J.W., Wang, S.J., Leong, W.S., Tong, Y., et al. (2015) Large-Scale Two-Dimensional MoS2 Photodetectors by Magnetron Sputtering. Optics Express, 23, Article No. 13580. https://doi.org/10.1364/oe.23.013580 |
| [13] | Wang, T., Guo, J., Zhang, Y., Yang, W., Feng, X., Li, J., et al. (2024) Synthesis of High-Quality Monolayer MoS2 via a CVD Upstream Deposition Strategy for Charge Capture and Collection. Crystal Growth & Design, 24, 2755-2763. https://doi.org/10.1021/acs.cgd.3c01369 |
| [14] | Suleman, M., Lee, S., Kim, M., Nguyen, V.H., Riaz, M., Nasir, N., et al. (2022) NaCl-Assisted Temperature-Dependent Controllable Growth of Large-Area MoS2 Crystals Using Confined-Space CVD. ACS Omega, 7, 30074-30086. https://doi.org/10.1021/acsomega.2c03108 |
| [15] | Wu, Q., Wang, R., Xiong, J., Cai, X., Wu, S., Jiao, J., et al. (2024) Transformation from MoO3 into MoS2: Experimental Study on Phase Transition and Energy Band Modulation. Applied Surface Science, 659, Article ID: 159951. https://doi.org/10.1016/j.apsusc.2024.159951 |
| [16] | Lei, J., Xie, Y., Kutana, A., Bets, K.V. and Yakobson, B.I. (2022) Salt-Assisted MoS2 Growth: Molecular Mechanisms from the First Principles. Journal of the American Chemical Society, 144, 7497-7503. https://doi.org/10.1021/jacs.2c02497 |
| [17] | Saseendran, S.B., Ashok, A., Jayaraj, M.K., Reshmi, R. and Asha, A.S. (2023) Single Step Growth of Vertical MoS2 Thin Films by Chemical Vapor Deposition for Hydrogen Evolution Reaction. Journal of Materials Science: Materials in Electronics, 34, Article No. 1233. https://doi.org/10.1007/s10854-023-10677-3 |
| [18] | 武鹏, 谈论, 李炜, 曹立伟, 赵俊博, 曲尧, 李昂. 大面积单层二硫化钼的制备及其光电性能[J]. 物理学报, 2023, 72(11): 296-302. |
| [19] | Rommelfangen, J., Redinger, A., Gonzalez-Angulo, M.A., Pareek, D. and Gütay, L. (2025) Influence of Sulfur Vacancies on the High Frequency Phonon Modes of ALD-Grown Monolayer MoS2. Physical Review Materials, 9, L121001. https://doi.org/10.1103/kzhl-5sy6 |
| [20] | Bhakhar, S., Patel, N.F., Pataniya, P.M., Gupta, S., Solanki, G.K. and Jha, P.K. (2023) Investigation of Electron-Phonon Interaction in Pure and Indium Doped MoS2 Using Temperature Dependent Raman Spectra. Surfaces and Interfaces, 36, Article ID: 102489. https://doi.org/10.1016/j.surfin.2022.102489 |
| [21] | Durairaj, S., Ponnusamy, K., Shinde, N.B., Eswaran, S.K., Asokan, V., Park, J.B., et al. (2021) Oxygen-Driven Growth Regulation and Defect Passivation in Chemical Vapor Deposited MoS2 Monolayers. Crystal Growth & Design, 21, 6793-6801. https://doi.org/10.1021/acs.cgd.1c00688 |
| [22] | Senkić, A., Supina, A., Akturk, M., Gadermaier, C., Maiuri, M., Cerullo, G., et al. (2023) Microscopic Investigation of Intrinsic Defects in CVD Grown MoS2 Monolayers. Nanotechnology, 34, Article ID: 475705. https://doi.org/10.1088/1361-6528/acf29b |
| [23] | Dong, R., Gong, X., Yang, J., Sun, Y., Ma, L. and Wang, J. (2022) The Intrinsic Thermodynamic Difficulty and a Step‐guided Mechanism for the Epitaxial Growth of Uniform Multilayer MoS2 with Controllable Thickness. Advanced Materials, 34, Article ID: 2201402. https://doi.org/10.1002/adma.202201402 |
| [24] | Chong, C., Liu, H., Wang, S. and Yang, K. (2021) First-Principles Study on the Effect of Strain on Single-Layer Molybdenum Disulfide. Nanomaterials, 11, Article No. 3127. https://doi.org/10.3390/nano11113127 |
| [25] | Wang, Y., Deng, L., Wei, Q., Wan, Y., Liu, Z., Lu, X., et al. (2020) Spin-Valley Locking Effect in Defect States of Monolayer MoS2. Nano Letters, 20, 2129-2136. https://doi.org/10.1021/acs.nanolett.0c00138 |
| [26] | Abedin, S., Kurtash, V., Mathew, S., Thiele, S., Jacobs, H.O. and Pezoldt, J. (2024) Defects Contributing to Hysteresis in Few-Layer and Thin-Film MoS2 Memristive Devices. Materials, 17, Article No. 1350. https://doi.org/10.3390/ma17061350 |
| [27] | Liu, J., Jin, Y., Lei, B., Zhao, X., Huang, Y., Zhang, L., et al. (2024) Studies on Electronic Structure and Optical Properties of MoS2/X (X = WSe2, MoSe2, AlN, and ZnO) Heterojunction by First Principles. Catalysts, 14, Article No. 678. https://doi.org/10.3390/catal14100678 |
| [28] | Gu, M., Han, M. and Kim, S. (2024) Electron Transport through the Multiple Sulfur Vacancies in MoS2. Current Applied Physics, 57, 20-25. https://doi.org/10.1016/j.cap.2023.10.008 |
