Identifying efficient and environmentally sustainable alternatives to silicon remains a major challenge for next-generation photovoltaics. Here, a CdS/CdTe/CH3NH3SnI3/Spiro-OMeTAD dual-absorber heterojunction solar cell is investigated using the SCAPS-1D simulation framework, where CdTe and the lead-free tin-based perovskite CH3NH3SnI3 jointly form the active absorbing layers. A systematic parametric study is performed to evaluate the influence of absorber thickness, doping concentration and operating temperature on device performance. The simulations show that a favorable band alignment at the CdTe/CH3NH3SnI3 interface, together with balanced absorber thicknesses and moderate doping, enhances charge separation and reduces recombination losses. Under optimized and intentionally idealized numerical assumptions, the proposed device reaches an open-circuit voltage of 1.017 V, a short-circuit current density of 34.429 mA cm？2, a fill factor of 82.07%, and a theoretical power conversion efficiency of 28.73%. The observed trends clearly highlight the potential of combining CdTe with lead-free tin-based perovskites in a dual-absorber heterojunction architecture. This study provides valuable design guidelines for the development of high-efficiency, lead-free thin-film solar cells and offers a solid theoretical framework for future experimental investigations.
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