In this work, we investigate the effect of the doping rate on the electrical parameters of the different zones of the bifacial polycrystalline silicon solar cell under multispectral illumination. To do this, from our hypothesis, we determined the expression of the continuity equation in the emitter, the base and the overdoped zone p+. The photocurrent density, photovoltage and electrical power were studied as a function of the dynamic velocity at the junction for different values of the doping rate. The results obtained by simulation show us that to achieve the best performance of the bifacial PV cell the doping rate of the emitter should be between [1018 - 1019 cm？3], that of the base between [1016 - 1017 cm？3] and for the p+ zone between [1020 - 1021 cm？3]. Within these doping ranges, the fill factor, which represents the efficiency of the cell, reaches optimal values.
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