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Applied Physics 2025
二维材料制备与MoS2/WS2异质结光电探测器研究进展
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Abstract:
由于传统电子器件性能已经接近其物理极限，因此需要一种新的材料来突破这一现状。作为TMD材料的代表，近年来，MoS2、WS2由于其优异的光学、电学特性在光电探测器领域展现出了巨大的应用潜力。如何制备高质量的二维材料以及如何提升MoS2/WS2异质结光电探测器的性能具有重要研究意义。本文综述了二维材料的制备方法与MoS2/WS2异质结光电探测器的研究现状。讨论了二维材料的制备方法，介绍了光电探测器的基本器件参数，总结了MoS2/WS2异质结光电探测器的性能现状，并对MoS2/WS2异质结光电探测器面临的问题进行了简要的总结与展望。
As the performance of conventional electronic devices is approaching its physical limit, a new material is needed to break through the situation. As representatives of TMD materials, MoS2 and WS2 have shown great potential for application in the field of photodetectors in recent years due to their excellent optical and electrical properties. How to synthesise high-quality 2D materials and how to enhance the performance of MoS2/WS2 heterostructure photodetectors are of great research significance. This paper reviews the synthesis methods of 2D materials and the present research progress of MoS2/WS2 heterojunction photodetectors. It discusses the synthesis methods of 2D materials, introduces the basic mechanisms and device parameters of photodetectors, summarises the present progress of MoS2/WS2 heterostructure photodetectors, and provides a brief summary of the problems with MoS2/WS2 heterostructure photodetector and an outlook.
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