具有高悬浮稳定性二氧化铈抛光液的制备
Preparation of Cerium Oxide Polishing Slurry with High Suspension Stability

随着集成电路行业的快速发展，电子产品不断向多样化和微型化的方向发展，这对半导体制造的核心材料单晶硅提出了严苛的要求。传统的硅晶片加工技术在尺寸精度和表面平整度方面已经很难满足当前日益复杂和高度集成化的芯片制造需求。化学机械抛光(CMP)技术应运而生。它结合了化学和机械的协同作用，能够快速消除硅晶片表面的缺陷，同时将材料损耗最小化。此技术成为高价值单晶硅加工的关键工艺，并在先进芯片制造过程中占据着不可替代的地位。在CMP过程中，氧化铈抛光粉由于其优异的切割能力和高抛光平整度而备受关注。然而，氧化铈抛光粉的悬浮稳定性较差以及严重的聚集倾向限制了其自身性能，导致晶圆表面出现划痕和产品质量下降。为了解决上述问题，本研究将咪唑-2-甲酸应用于氧化铈抛光粉的表面改性。通过热处理方法制备CeO？粉末，并利用化学吸附原理成功将咪唑-2-甲酸吸附至CeO？表面，形成M@CeO？。借助X射线衍射(XRD)和傅里叶变换红外(FTIR)光谱分析，研究结果强烈支持在改性过程中CeO？的晶体结构完整性得到保持，并且咪唑-2-甲酸被有效吸附。动态光散射(DLS)分析结果显示，经过表面改性后，CeO？纳米颗粒的粒度分布显著变窄，悬浮稳定性大幅提高。
With the rapid development of the integrated circuit industry, electronic products are continuously evolving towards diversification and miniaturization, which poses extremely strict requirements on the core material of semiconductor manufacturing, monocrystalline silicon. Traditional silicon wafer processing technology has been unable to meet the increasingly complex and integrated chip manufacturing needs in terms of dimensional accuracy and surface flatness. Chemical Mechanical Polishing (CMP) technology, which combines the synergistic effects of chemical and mechanical processes, has thereof emerged. CMP can rapidly eliminate defects on the surface of silicon wafers while minimizing material loss, thus becoming a key process for high-value monocrystalline silicon processing and occupying an irreplaceable position in advanced chip manufacturing processes. In the CMP process, cerium oxide polishing powder has attracted significant attention due to its excellent cutting ability and high polishing flatness. However, its poor suspension stability and severe aggregation tendency limit its performance, resulting in scratches on the wafer surface and reduced product quality. To address this issue, this study applies imidazole-2-carboxylic acid to the surface modification of cerium oxide polishing powder. By preparing CeO₂ powder through a thermal treatment method and successfully adsorbing imidazole-2-carboxylic acid onto the surface of CeO₂ through chemical adsorption principles, M@CeO₂ is produced. X-ray diffraction (XRD) and Fourier Transform Infrared (FTIR) spectroscopy analysis strongly demonstrate the maintained integrity of the crystal structure of CeO₂ during the modification process and the effective adsorption of imidazole-2-carboxylic acid. Dynamic Light Scattering (DLS) analysis results show that after surface modification, the particle size