A Bose-Einstein condensate (BEC) is a topic of significant interest within the scientific community. It is well understood that Rb-87 and Yb2Si2O7 have been utilized in experiments to explore this phenomenon. These studies have demonstrated that these materials can achieve the BEC phase, a state that has been experimentally validated. In this paper, we further establish, from the perspective of theoretical physics, that silicon is also capable of exhibiting BEC properties. Our approach differs from prior studies in that it uses innovatively certain boundary conditions. Specifically, we employed Yb-70 as a gamma-ray radiation source and a 1 nm linewidth (as the half-width of a 2 nm line). Additionally, we utilized the concept of half-value thickness from nuclear physics absorption models to optimize the semiconductor process. This method effectively removes ytterbium (Yb) during the process, leaving only silicon, silicon-based materials, or silicon topological superconductors on the wafer. This technical procedure results in the creation of “BEC silicon” at absolute zero temperature (0 K), introducing a novel material for BEC realization.
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