It is well known that work done on a material by conservative forces (electrical, mechanical, chemical) will increase the Gibbs Potential of the material. The increase in Gibbs Potential can be stored in the material and is free/available to do work at some later time. However, it will be shown in this paper that while in this state of higher Gibbs potential, the material is metastable and the material will degrade spontaneously/naturally with time in an effort to reach a lower Gibbs Potential. A generalized Gibbs Potential Model is developed herein to better understand its impact on a materials degradation rate. Special attention will be given to dielectrics degradation.
References
[1]
McPherson, J. (2019) Reliability Physics and Engineering. 3rd Edition, Springer Publishing.
[2]
Koch, G., et al. (2016) International Measures of Prevention, Application, and Economics of Corrosion Technologies Study. Report No. OAPUS310GKOCH.
[3]
Ramadan, A.T., Tolba, A.H. and El-Desouky, B.S. (2021) Generalized Power Akshaya Distribution and Its Applications. Open Journal of Modelling and Simulation, 9, 323-338. https://doi.org/10.4236/ojmsi.2021.94021
[4]
Murithi, I.K., Okenye, J.O., Islam, A.S. and Wanyonyi, R.W. (2020) Bayesian Estimation of the Shape Parameters of McDonald Generalized Beta-Binomial Distribution. OALib, 7, e6651. https://doi.org/10.4236/oalib.1106651
[5]
Teamah, A.A.M. and Elmenify, H.M. (2023) The Doubly Truncated Generalized Log-Lindley Distribution. Applied Mathematics, 14, 481-495. https://doi.org/10.4236/am.2023.147030
[6]
Sears, F. and Salinger, G. (1975) Thermodynamics, Kinetic Theory, and Statistical Thermodynamics. 3rd Edition, Addison and Wesley Publishing.
[7]
Atkins, P. (1984) The Second Law. Scientific American Books, Freeman & Company.
[8]
Atkins, P. (1994) Physical Chemistry. 5th Edition, W.H. Freeman and Company.
[9]
Desloge, E. (1968) Thermal Physics. Holt, Rinehart and Wilson, Inc.
[10]
McPherson, J.W. and Mogul, H.C. (1998) Underlying Physics of the Thermochemical E Model in Describing Low-Field Time-Dependent Dielectric Breakdown in SiO2 Thin Films. Journal of Applied Physics, 84, 1513-1523. https://doi.org/10.1063/1.368217
[11]
Lorentz, H. (1952) The Theory of Electrons and its Applications to the Phenomena of Light and Radiant Heat. 2nd Edition, Dover Publications.
[12]
McPherson, J.W. (2016) Increases in Lorentz Factor with Dielectric Thickness. World Journal of Condensed Matter Physics, 6, 152-168. https://doi.org/10.4236/wjcmp.2016.62018
[13]
Dumin, D. (2002) Oxide Reliability: A Summary of Silicon Oxide Wear-Out, Breakdown, and Reliability. World Scientific Publishing.
[14]
McPherson, J.W. (2016). On Why Dielectric Breakdown Strength Reduces with Dielectric Thickness. 2016 IEEE International Reliability Physics Symposium (IRPS), Pasadena, 17-21 April 2016, 3A-3-1-3A-3-8. https://doi.org/10.1109/irps.2016.7574512
[15]
McPherson, J.W., Kim, J., Shanware, A., Mogul, H. and Rodriguez, J. (2003) Trends in the Ultimate Breakdown Strength of High Dielectric-Constant Materials. IEEE Transactions on Electron Devices, 50, 1771-1778. https://doi.org/10.1109/ted.2003.815141
[16]
Chen, I.C., Holland, S. and Hut, C. (1985). A Quantitative Physical Model for Time-Dependent Breakdown in SiO2. 23rd International Reliability Physics Symposium, Orlando, 25-29 March 1985, 24-31. https://doi.org/10.1109/irps.1985.362070
Suñé, J. and Wu, E.Y. (2004) Hydrogen-Release Mechanisms in the Breakdown of Thin SiO2 Films. Physical Review Letters, 92, Article ID: 087601. https://doi.org/10.1103/physrevlett.92.087601
