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TaTe2/WS2二维异质结的制备及光电性能表征
Preparation of Two-Dimensional TaTe2/WS2 Heterojunction and Its Photoelectric Properties

DOI: 10.12677/ms.2024.146109, PP. 966-974

Keywords: 二维材料,CVD,单层WS2,TaTe2/WS2异质结,超快光谱
Two-Dimensional Material
, CVD, Single Layer WS2, TaTe2/WS2 Heterojunction, Ultrafast Spectrum

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Abstract:

二维材料异质结构由于其优异的物理化学性质引起了人们的广泛研究,从机械剥离石墨烯以来,制备二维异质结的各种方法层出不穷。在这里,我们介绍了一种无污染,快速,便捷的半湿法PDMS辅助聚乙烯吡咯烷酮(PVP)和聚乙烯醇(PVA)快速转移搭建TaTe2/WS2异质结的方法。光学显微镜、拉曼光谱、光致发光光谱和旋光圆偏泵浦表明单层WS2到TaTe2之间主要为能量转移。更为重要的是基于异质结构的光电探测器在415 nm入射光下的响应率和超高探测率分别为9 A/W,1.73 × 1012 Jones。我们的研究可能为快速制备异质结提供了一种新途径,由于TaTe2/WS2异质结光电探测器的超高探测率,证明其在光电领域的潜力。
Due to its excellent physical and chemical properties, two-dimensional material heterostructures have been widely studied. Since the mechanical stripping of graphene, various methods for preparing two-dimensional heterostructures have emerged one after another. Here, we introduce a non-polluting, fast and convenient semi-wet PDMS assisted rapid transfer of polyvinylpyrrolidone (PVP) and polyvinyl alcohol (PVA) to construct TaTe2/WS2 heterojunction. Optical microscopy, Raman spectroscopy, photoluminescence spectroscopy and rotation rotation pump indicate that the energy transfer between WS2 and TaTe2 is the main one. More importantly, the response rate and ultra-high detection rate of the photodetector based on heterogeneous structure at 415 nm incident light are 9 A/W, 1.73 × 1012 Jones, respectively. Our study may provide a new way for the rapid preparation of heterojunction, due to the high detection rate of TaTe2/WS2 heterojunction photodetector, which proves its potential in the field of optoelectronics.

References

[1]  Kang, J., Tongay, S., Zhou, J., Li, J. and Wu, J. (2013) Band Offsets and Heterostructures of Two-Dimensional Semiconductors. Applied Physics Letters, 102, Article ID: 012111.
https://doi.org/10.1063/1.4774090
[2]  Ali, M.N., Xiong, J., Flynn, S., Tao, J., Gibson, Q.D., Schoop, L.M., et al. (2014) Large, Non-Saturating Magnetoresistance in WTe2. Nature, 514, 205-208.
https://doi.org/10.1038/nature13763
[3]  Zou, Z., Li, D., Liang, J., Zhang, X., Liu, H., Zhu, C., et al. (2020) Epitaxial Synthesis of Ultrathin β-In2Se3/MoS2 Heterostructures with High Visible/Near-Infrared Photoresponse. Nanoscale, 12, 6480-6488.
https://doi.org/10.1039/c9nr10387b
[4]  Changyong L., Chun L., Shuai W., et al. (2016) Zener Tunneling and Photoresponse of a WS2/Si van der Waals Heterojunction. ACS Applied Materials & Interfaces, 8, 18375-18382
[5]  Li, X., Lin, M., Lin, J., Huang, B., Puretzky, A.A., Ma, C., et al. (2016) Two-Dimensional GaSe/MoSe2 Misfit Bilayer Heterojunctions by van der Waals Epitaxy. Science Advances, 2, Article e1501882.
https://doi.org/10.1126/sciadv.1501882
[6]  Yang, T., Zheng, B., Wang, Z., Xu, T., Pan, C., Zou, J., et al. (2017) Van Der Waals Epitaxial Growth and Optoelectronics of Large-Scale WSe2/SnS2 Vertical Bilayer p?n Junctions. Nature Communications, 8, Article No. 1906.
https://doi.org/10.1038/s41467-017-02093-z
[7]  Ye, L., Li, H., Chen, Z. and Xu, J. (2016) Near-Infrared Photodetector Based on MoS2/Black Phosphorus Heterojunction. ACS Photonics, 3, 692-699.
https://doi.org/10.1021/acsphotonics.6b00079
[8]  Sun P., Yang X., Li K., et al. (2023) Laser Writing of GaN/Ga2O3 Heterojunction Photodetector Arrays. Advanced Materials Interfaces, 2300371.
[9]  Huang, J., Jiang, J., Hu, L., Zeng, Y., Ruan, S., Ye, Z., et al. (2020) Self-Powered Ultraviolet Photodetector Based on CuGaO/ZnSO Heterojunction. Journal of Materials Science, 55, 9003-9013.
https://doi.org/10.1007/s10853-020-04614-6
[10]  Zhang, H., Li, H., Yu, H., Wang, F., Song, X., Xu, Z., et al. (2023) High Responsivity and Broadband Photodetector Based on SnS2/Ag2S Heterojunction. Materials Letters, 330, Article ID: 133037.
https://doi.org/10.1016/j.matlet.2022.133037

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