|
|
Applied Physics 2024
缺陷辅助隧穿对TOPCon太阳能电池性能的影响
|
Abstract:
TOPCon太阳能电池超薄氧化硅层中的载流子的直接隧穿和针孔传输是两种当前被广泛探讨的机制，在实际电池制造过程中，超薄氧化硅层在高温诱导应力下在产生针孔的同时，也可能伴随大量缺陷的出现，这些缺陷有助于载流子通过缺陷辅助隧穿进行传输。本文通过数值求解漂移扩散输运方程，理论模拟了光照下TOPCon太阳能电池的性能在氧化层厚度为2.0 nm的情况下，综合考虑直接隧穿和缺陷辅助隧穿作为两种主要的输运机制，TOPCon太阳能电池效率将会提高。研究了电池填充因子随氧化层电子有效质量的依赖关系。接着讨论了从晶体硅体寿命和背面多晶硅浓度对TOPCon太阳能电池性能的影响。本文的研究结果不仅有助于加深人们对TOPCon太阳能电池载流子输运机制的理解，还为优化电池结构设计提供了有益的理论指导。
The direct tunneling and pinhole transport of charge carriers in the ultra-thin silicon oxide layer of TOPCon solar cells are two widely discussed mechanisms. In the actual solar cell manufacturing process, the ultra-thin silicon oxide layer may generate pinholes under high-temperature induced stress, which may also be accompanied by a large number of traps. These traps help transport charge carriers through trap-assisted tunneling. This article numerically solves the drift diffusion transport equation and theoretically simulates the performance of TOPCon solar cells under illumination. With an oxide layer thickness of 2.0 nm, considering direct tunneling and trap-assisted tunneling as the two main transport mechanisms, the efficiency of TOPCon solar cells will be improved. The dependence of filling factor on the effective mass of oxide layer electrons was studied. Subsequently, the effects of crystal silicon lifetime and impurity concentration in the backside polycrystalline silicon on the performance of TOPCon solar cells were discussed. The research results presented in this paper not only deepen our understanding of the carrier transport mechanisms in TOPCon solar cells but also provide valuable theoretical guidance for optimizing the design of cell structures.
| [1] | Feldmann, F., Bivour, M., Reichel, C., et al. (2014) Passivated Rear Contacts for High-Efficiency n-Type Si Solar Cells Providing High Interface Passivation Quality and Excellent Transport Characteristics. Solar Energy Materials and Solar Cells, 120, 270-274. https://doi.org/10.1016/j.solmat.2013.09.017 |
| [2] | Richter, A., Müller, R., Benick, J., et al. (2021) Design Rules for High-Efficiency Both-Sides-Contacted Silicon Solar Cells with Balanced Charge Carrier Transport and Recombination Losses. Nature Energy, 6, 429-438. https://doi.org/10.1038/s41560-021-00805-w |
| [3] | Lancaster, K., Groβer, S., Feldmann, F., et al. (2016) Study of Pinhole Conductivity at Passivated Carrier-Selected Contacts of Silicon Solar Cells. Energy Procedia, 92, 116-121. https://doi.org/10.1016/j.egypro.2016.07.040 |
| [4] | Peibst, R., R？mer, U., Larionova, Y., et al. (2016) Working Principle of Carrier Selective Poly-Si/C-Si Junctions: Is Tunnelling the Whole Story? Solar Energy Materials and Solar Cells, 158, 60-67. https://doi.org/10.1016/j.solmat.2016.05.045 |
| [5] | Tetzlaff, D., Krügener, J., Larionova, Y., et al. (2017) A Simple Method for Pinhole Detection in Carrier Selective POLO-Junctions for High Efficiency Silicon Solar Cells. Solar Energy Materials and Solar Cells, 173, 106-110. https://doi.org/10.1016/j.solmat.2017.05.041 |
| [6] | Wietler, T.F., Tetzlaff, D., Krügener, J., et al. (2017) Pinhole Density and Contact Resistivity of Carrier Selective Junctions with Polycrystalline Silicon on Oxide. Applied Physics Letters, 110, Article ID: 253902. https://doi.org/10.1063/1.4986924 |
| [7] | Feldmann, F., Nogay, G., L？per, P., et al. (2018) Charge Carrier Transport Mechanisms of Passivating Contacts Studied by Temperature-Dependent J-V Measurements. Solar Energy Materials and Solar Cells, 178, 15-19. https://doi.org/10.1016/j.solmat.2018.01.008 |
| [8] | Hofmann, K., Wrubloff, G. and Mccorkle, R.A. (1986) Defect Formation in Thermal SiO2 by High-Temperature Annealing. Applied Physics Letters, 49, 1525-1527. https://doi.org/10.1063/1.97322 |
| [9] | Feng, M., Zeng, Y., Yang, Z., et al. (2021) Rapid-Thermal-Annealing-Induced Passivation Degradation and Recovery of Polysilicon Passivated Contact with Czochralski and Cast Multicrystalline Silicon Substrates. Physica Status Solidi (A) Applications and Materials Science, 218, Article ID: 2100344. https://doi.org/10.1002/pssa.202100344 |
| [10] | Stangl, R., Leendertz, C. and Haschke, J. (2010) Numerical Simulation of Solar Cells and Solar Cell Characterization Methods: The Open-Source on Demand Program AFORS-HET. In: Rugescu, R.D., eds., Solar Energy, IntechOpen, 319-354. https://doi.org/10.5772/8073 |
| [11] | Liu, Y., Ahmadpour, M., Adam, J., et al. (2018) Modeling Multijunction Solar Cells by Nonlocal Tunneling and Subcell Analysis. IEEE Journal of Photovoltaics, 8, 1363-1369. https://doi.org/10.1109/JPHOTOV.2018.2851308 |
| [12] | Tessler, N. and Vaynzof, Y. (2020) Insights from Device Modeling of Perovskite Solar Cells. ACS Energy Letters, 5, 1260-1270. https://doi.org/10.1021/acsenergylett.0c00172 |
| [13] | Rana, F., Tiwari, S. and Buchanan, D.A. (1996) Self-Consistent Modeling of Accumulation Layers and Tunneling Currents through Very Thin Oxides. Applied Physics Letters, 69, 1104-1106. https://doi.org/10.1063/1.117072 |
| [14] | Gehring, A. and Selberherr, S. (2004) Modeling of Tunneling Current and Gate Dielectric Reliability for Nonvolatile Memory Devices. IEEE Transactions on Device and Materials Reliability, 4, 306-319. https://doi.org/10.1109/TDMR.2004.836727 |
| [15] | Lee, W.C. and Hu, C. (2001) Modeling CMOS Tunneling Currents through Ultrathin Gate Oxide Due to Conduction and Valence-Band Electron and Hole Tunneling. IEEE Transactions on Electron Devices, 48, 1366-1373. https://doi.org/10.1109/16.930653 |
| [16] | Steinkemper, H., Feldmann, F., Bivour, M., et al. (2015) Numerical Simulation of Carrier-Selective Electron Contacts Featuring Tunnel Oxides. IEEE Journal of Photovoltaics, 5, 1348-1356. https://doi.org/10.1109/JPHOTOV.2015.2455346 |
| [17] | Guo, X., Liao, M., Rui, Z., et al. (2020) Comparison of Different Types of Interfacial Oxides on Hole-Selective p -Poly-Si Passivated Contacts for High-Efficiency c-Si Solar Cells. Solar Energy Materials and Solar Cells, 210, Article ID: 110487. https://doi.org/10.1016/j.solmat.2020.110487 |
| [18] | Chen, W., Liu, X., Liu, W., et al. (2023) Optimization of Activated Phosphorus Concentration in Recrystallized Polysilicon Layers for the n-TOPCon Solar Cell Application. Solar Energy Materials and Solar Cells, 252, Article ID: 112206. https://doi.org/10.1016/j.solmat.2023.112206 |
