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薄膜铂电阻制备工艺研究
Research on Preparation Technology of Thin-Film Platinum Resistance

DOI: 10.12677/IaE.2024.121007, PP. 49-54

Keywords: 薄膜,铂电阻,磁控溅射,温度系数
Thin-Film
, Platinum Resistance, Magnetron Sputtering, Temperature Coefficient

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Abstract:

薄膜铂电阻在温度测量领域应用广泛,使用数量巨大,在很多行业中,已取代了传统的绕线式铂电阻,但是由于其薄膜制备工艺和结构的不同,薄膜铂电阻的温度特性和稳定性与传统绕线式铂电阻有所不同。本文采用磁控溅射法在陶瓷基体上制备薄膜铂电阻温度传感器,并研究了基片温度、热处理工艺和薄膜厚度对薄膜铂电阻温度传感器的电阻值、温度系数等特性的影响。
Platinum thin-film resistor is widely used in the field of temperature measurement, and used in large quantities. In many industries, it has replaced the traditional wire-wound platinum resistor. However, due to the different preparation technology and structure of the thin-film platinum, the temperature characteristics and stability of the thin film platinum resistor are different from the traditional wire-wound platinum resistor. In this paper, the thin-film platinum resistance tem-perature sensor was prepared on ceramic substrate by magnetron sputtering, and the effects of substrate temperature, heat treatment process and thin film thickness on the resistance value and temperature coefficient of the thin film platinum resistance temperature sensor were studied.

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