Results
of experimental investigation of detection (rectification) of high power X-band
microwave signal in diodes of various design (semiconductor p-n-junction,
point-contact, Schottky, Metal-Isolator-Metal—MIM) are
reported. The maximum of the detected direct voltage V vs. power P of microwave signal and subsequent polarity reversal, previously found in MIM diodes
in the optical and microwave bands, have found to be characteristic of all investigated
diodes as well. After the reversal of polarity, this dependence comes linear, and
the sign of the voltage corresponds to thermoEMF. In some diodes, the hysteresis
on V(P) was observed. All 5 types of V(P) of MIM diodes (have made from
different pairs of metals), reported earlier, were reproduced on same p-n-junction
diode by variable external DC bias. These results joined with abnormal frequency
cutoff forced to suggest that there is an unknown mechanism for direct flow of charge
carriers (and for generate direct current) in the high-frequency electrical field,
which differs from the conventional rectification.
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