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外延生长的菱方相Hf0.5Zr0.5O2薄膜的铁电性
Ferroelectric Properties of Rhombohedral in Epitaxically Grown Hf0.5Zr0.5O2 Films

DOI: 10.12677/APP.2022.121001, PP. 1-7

Keywords: Hf0.5Zr0.5O2薄膜，外延薄膜，铁电性，超薄铁电薄膜
Hf0.5Zr0.5O2 Film, Epitaxial Thin Film, Ferroelectricity, Ultra-Thin Ferroelectric Film

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Abstract:

本文采用脉冲激光沉积技术，在SrTiO3 (001)衬底上，以La0.7Sr0.3MnO3薄膜为缓冲层和底电极，成功制备了沿(111)取向外延生长的Hf0.5Zr0.5O2 (HZO)薄膜。X射线衍射的结果表明，外延HZO薄膜中菱方相的比例随薄膜生长温度升高而增加，随薄膜厚度的增加而减小。原子力显微镜的结果表明，外延HZO薄膜表面平整，均方根粗糙度为0.228 nm。压电力显微镜的结果证明外延HZO薄膜在室温下表现出良好的铁电性，同时确定了其室温压电系数d33约为4.8 pm/V。这些实验结果为基于HZO薄膜电子器件的设计提供了重要实验依据。
In this work, ferroelectric rhombohedral Hf0.5Zr0.5O2 (HZO) thin films with (111)-orientation were epitaxially grown on La0.7Sr0.3MnO3-buffered SrTiO3 (001) substrates by pulsed laser deposition. X-ray diffraction (XRD) scans show that the ratio of rhombohedral phase increases with the increase of thin film growth temperature, and decreases with the increase of thin film thickness. Atomic force microscopy (AFM) image shows that the HZO thin film is very smooth and its root mean square roughness is 0.228 nm. Piezoresponse Force Microscopy (PFM) measurements demonstrate that the HZO thin film shows superior ferroelectricity at room temperature. Meanwhile, the piezoelectric coefficient d33 of HZO thin film is estimated to be around 4.8 pm/V. Our work provides an important experimental result for designing nano-electronic devices based on HZO thin films.

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