The Effects of Different Ga Doping on Structural, Optical and Electrical Properties of CdO Films

CdO and CdO:Ga films were produced using the ultrasonic spray pyrolysis method. The structural, optical and electrical properties of produced films were defined by x-ray diffraction pattern (XRD), UV–VIS spectrophotometer and electrical measurements, respectively. The XRD patterns show that all the films deposited at 275 ± 5 °C are in face center cubic polycrystalline structure. The optic band gaps of Ga doped films were obtained with the optical method and observed to change from 2.50 to 2.66 eV with the increase of Ga doping. Additionally, the resistivity, conductivity and I–V characteristics of the samples are investigated with four point and two point probe methods. It is clearly seen that the electrical properties of CdO have improved with the appropriate Ga doping. The best conductivity was obtained with 4% and 8% Ga doping of CdO films