Effect of the Annealing and Growth Time on Graphene Synthesis via Chemical Vapor Deposition Method

Due to its superior properties such as, has high conductivity, high durability and transparency, graphene is one of the most attractive material in recent years. The important parameters that affects graphene synthesis using chemical vapour deposition technique are growth temperature, growth time, annealing time, pressure, growth substrate, gas purity and gas flows. Among these parameters the growth time and annealing time are the most important parameters for graphene growth, thus in this study the effect of growth and annealing time on homogenous single layer graphene were investigated. The grown graphene films by using different growth and annealing time were characterized via Raman Spectroscopy technique and as a result single layer graphene growth process were optimized. In general, there was no significant change in the quality of the graphene in the experimental groups where the annealing time was increased from 20 minutes to 40 minutes. In the experimental groups where the growth time was increased, it was determined that the graphene quality improved with the time increases up to 40 minutes