Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration

Hexagonal boron nitride (h-BN) has been predicted to exhibit an in-plane thermal conductivity as high as ~？550？W？m？1 K？1 at room temperature, making it a promising thermal management material. However, current experimental results (220–420？W？m？1 K？1) have been well below the prediction. Here, we report on the modulation of h-BN thermal conductivity by controlling the B isotope concentration. For monoisotopic 10B h-BN, an in-plane thermal conductivity as high as 585？W？m？1 K？1 is measured at room temperature, ~？80% higher than that of h-BN with a disordered isotope concentration (52%:48% mixture of 10B and 11B). The temperature-dependent thermal conductivities of monoisotopic h-BN agree well with first principles calculations including only intrinsic phonon-phonon scattering. Our results illustrate the potential to achieve high thermal conductivity in h-BN and control its thermal conductivity, opening avenues for the wide application of h-BN as a next-generation thin-film material for thermal management, metamaterials and metadevices