Laterally confined photonic crystal surface emitting laser incorporating monolayer tungsten disulfide

With an ultimately thin active region, monolayer transition metal dichalcogenide lasers have the potential of realizing ultralow lasing threshold and power consumption. The flexibility also enables integration possibilities on unconventional substrates. Here, we report a photonic crystal surface emitting laser using monolayer tungsten disulfide as the gain medium. The cavity design utilizes a heterostructure in the photonic crystal lattice to provide lateral confinement for a high quality factor with a compact active region. Room-temperature continuous wave lasing is realized after integrating monolayer tungsten disulfide flakes onto the silicon nitride photonic crystal on a quartz substrate. Highly directional, near surface-normal emission has also been experimentally demonstrated. The work reported here demonstrates that a large-area single-mode directional laser can be realized from a monolayer gain medium, which is critical for laser scaling for on-chip integration in data and sensing applications