A
single diode model for a photovoltaic solar module is the most ideal and quick
way of analyzing the module characteristics before implementing them in a solar
plant. Solar modules manufacturers provide information for three critical
points that are essential in I-V, P-V or P-I curves. In this study, we propose
four separate simulation procedures to estimate the five-model parameters of an
analogous single diode equivalent circuit by utilizing three cardinal points of
the photovoltaic module I-V curve, described from experimental data using a
solar simulator and manufacturer’s datasheet. The main objective is to extract
and use the five unknown parameters of a single diode model to describe the
photovoltaic system using I-V ad P-V plots under different environmental
conditions. The most influential parameters that greatly alter the cardinal
points defined at short circuit point (SCP), the maximum power point (MPP) and
the open circuit point(OCP) are the ideality factor (n) and the diode saturation current (Io). For a quick and fast convergence, we
have determined the optimal ideality factor (no) and optimal saturation current (Ioopt) as the
primary parameters by first assuming the optimal values of Rsh, Rsand Iphat
standard test conditions (STC). Further, we evaluated the effects of Iph, Rsand Rshon I-V and
P-V curves by considering the values of n below n
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