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Co2MnSn薄膜结构调控与自旋热输运性质研究
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Abstract:
本文以磁控溅射制备的Co2MnSn薄膜为研究对象，研究了薄膜沉积温度对其反常能斯特效应和自旋塞贝克效应相关特性的影响及其物理机制。研究表明，通过调节沉积温度可以得到B2结构的Co2MnSn薄膜；随着沉积温度的升高，薄膜的磁性和金属性也将得到增强。本文以B2相的Co2MnSn薄膜为对象，重点研究了其在温度梯度下的反常能斯特效应和自旋塞贝克效应。实验发现，常温下，500℃沉积的Co2MnSn薄膜的反常能斯特系数为0.7 μV/K，比常温下Fe，Co，Ni等传统金属(约0.03 μV/K)大20倍。本文研究还进一步表明，通过调节Co2MnSn薄膜的制备温度，可以在一定程度上调控其反常能斯特效应和自旋塞贝克效应，这将有益于热电材料以及热电效应相关设备的研发。
In this paper, Co2MnSn thin films prepared by magnetron sputtering were taken as the research object, and the effect of films deposition temperature on the characteristics of the anomalous Nernst effect and spin Seebeck effect and its physical mechanism were investigated. The research results show that Co2MnSn thin films with B2 structure can be obtained by adjusting the deposition temperature. As the deposition temperature increases, the magnetic and metallic properties of the thin film were enhanced. Taking the B2 phase Co2MnSn thin films as the object, this paper focuses on the anomalous Nernst effect and the spin Seebeck effect under the temperature gradient. The experiment results show that the anomalous Nernst coefficient of Co2MnSn thin film deposited at 500？C is 0.7 μV/K, which is 20 times larger than that of 3 d metals, such as Fe, Co, and Ni. The research in this paper further shows that by controlling the preparation temperature of Co2MnSn thin films, the anomalous Nernst effect and spin Seebeck effect can be adjusted to a certain extent, which will be beneficial to the research and development of thermoelectric materials and thermoelectric effect related equipment.
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