生长温度对InAs/GaAs横向异质结构纳米线形貌及晶体结构的影响
Effect of growth temperature on the morphology and crystal structure of InAs/GaAs radial heterostructure nanowires

DOI: 10.13801/j.cnki.fhclxb.20190118.002

Keywords: 纳米线,气-液-固,金属有机化合物气相沉积(MOCVD),GaAs,InAs
nanowire,vapor-liquid-solid,metal organic chemical vapor deposition (MOCVD),GaAs,InAs

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[1]	LIU Y, PENG Y, GUO J, et al. The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD[J]. AIP Advances, 2018, 8(5):055108.
[2]	ZONG Y, HUANG H, SONG W, et al. Growth of oriented GaN nanowires by controlling nucleation conditions[J]. Crystal Research and Technology, 2016, 51(12):757-761.
[3]	YAN X, ZHANG X, REN X, et al. Growth of InAs quantum dots on GaAs nanowires by metal organic chemical vapor deposition[J]. Nano Letters, 2011, 11(9):3941-3945.
[4]	GUO J, HUANG H, DING Y, et al. Growth of zinc blende GaAs/AlGaAs heterostructure nanowires on Si substrate by using AlGaAs buffer layers[J]. Journal of Crystal Growth, 2012, 359:30-34.
[5]	REN X M, HUANG H, DUBROVSKII V G, et al. Experimental and theoretical investigations on the phase purity of GaAs zincblende nanowires[J]. Semiconductor Science and Technology, 2010, 26(1):014034.
[6]	ZANNIER V, ERCOLANI D, GOMES U P, et al. Catalyst composition tuning:The key for the growth of straight axial nanowire heterostructures with group III interchange[J]. Nano Letters, 2016, 16:7183-7190.
[7]	ZHANG P, LIU Y, GUO J, et al. Growth of n-doped and p-doped gaas nanowires by au-assisted metalorganic chemical vapor deposition:Effect of dopants flux rates[J]. Advanced Materials Research, 2013, 774:860-863.
[8]	YE X, HUANG H, GUO J, et al. Size-independent growth of pure zinc blende GaAs nanowires[J]. Journal of Semiconductors, 2010, 31(7):073001.
[9]	BEZNASYUK D V, ROBIN E, HERTOG M D, et al. Dislocation-free axial InAs-on-GaAs nanowires on silicon[J]. Nanotechnology, 2017, 28(36):1700429.
[10]	XU Z, HUANGFU H, LI X, et al. Role of nanocone and nanohemisphere arrays in improving light trapping of thin film solar cells[J]. Optics Communications, 2016, 377:104-109.
[11]	LI M, XU Z, LI Z, et al. An experimental and CFD study on gas flow field distribution in the growth process of multi-walled carbon nanotube arrays by thermal chemical vapor deposition[J]. Crystal Research and Technology, 2016, 51(12):702-707.
[12]	LIU Y, PENG Y, GUO J, et al. Effect of doped substrates on the growth of GaAs nanowires via metal organic chemical vapor deposition[J]. AIP Advances, 2017, 7(8):085104.
[13]	XU Z, HUANGFU H, HE L, et al. Light-trapping properties of the Si inclined nanowire arrays[J]. Optics Communications, 2017, 382:332-336.
[14]	GUO J, HUANG H, ZHANG J, et al. Morphological control of GaAs/InAs radial heterostructure nanowires:From cylindrical to coherent quantum dot structure[J]. Journal of Applied Physics, 2013, 113(11):54-57.
[15]	HUANG H, REN X, YE X, et al. Control of the crystal structure of InAs nanowires by tuning contributions of adatom diffusion[J]. Nanotechnology, 2010, 21(47):475602.
[16]	叶显, 黄辉, 任晓敏, 等. InAs/GaAs和InAs/InxGa1-xAs/GaAs纳米线异质结构的生长研究[J]. 物理学报, 2011, 60(3):036103.YE X, HUANG H, REN X M, et al. Growths of InAs/GaAs and InAs/InxGa1-xAs/GaAs naowire heterostructures[J]. Acta Physica Sinica, 2011, 60(3):036103(in Chinese).
[17]	GUO J, HUANG H, REN X M, et al. Realizing zinc blende GaAs/AlGaAs axial and radial heterostructure nanowires by tuning the growth temperature[J]. Journal of Materials Science & Technology, 2011, 27(6):507-512.
[18]	HUANG H, REN X M, YE X, et al. Growth of stacking-faults-free zinc blende GaAs nanowires on Si substrate by using AlGaAs/GaAs buffer layers[J]. Nano Letters, 2010, 10(1):64-68.
[19]	GUO J, HUANG H, REN X M, et al. Growth of zinc blende GaAs/AlGaAs radial heterostructure nanowires by a two-temperature process[J]. Chinese Physics Letters, 2011, 28(3):036101.
[20]	SIBIREV N V, TIMOFEEVA M A, BOLSHAKOV A D, et al. Surface energy and crystal structure of nanowhiskers of III-V semiconductor compounds[J]. Physics of the Solid State, 2010, 52(7):1531-1538.
[21]	GUO J, HUANG H, REN X M, et al. Growth and optical properties of InP nanowires formed by Au-assisted metalorganic chemical vapor deposition:Effect of growth temperature[J]. Journal of Vacuum Science & Technology B, 2011, 29(3):030603.
[22]	PALADUGU M, ZOU J, GUO Y, et al. Nature of heterointerfaces in GaAs/InAs and GaAs/InAs axial nanowire het-erostructures[J]. Applied Physics Letters, 2008, 93(10):101911.

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