Magnetic properties of GaAs parabolic quantum dot in the presence of donor impurity under the influence of external tilted electric and magnetic fields

The dependence of the magnetization and magnetic susceptibility of donor impurity in parabolic GaAs (Gallium Arsenide) quantum dot has been investigated, at finite temperature under the influence of external tilted electric and magnetic fields. Based on the effective mass approximation, the Hamiltonian of an electron confined in a parabolic quantum dot in the presence of donor impurity which is presented in electric and magnetic fields has been solved by employing the numerical diagonalization method of the Hamiltonian matrix. All the energy matrix elements have been obtained in analytical form. We have shown the variations of the statistical energy and binding energy of donor impurity with the electric and magnetic field strengths and tilt electric field angle. The computed results show that the electrical field can tune the magnetic properties of the QD GaAs medium by flipping the sign of its magnetic susceptibility from diamagnetic (χ？<？0) to paramagnetic (χ？>？0)