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- 2018
Electronic Structure and I-V Characteristics of InSe NanoribbonsDOI: 10.1186/s11671-018-2517-2 Keywords: InSe monolayer nanoribbon, Electronic structure, Negative differential resistance, Semiconductor-metal transition Abstract: Top and side views of 6-HZKH (a) and 11-HAAH (b) InSe nanoribbons. Nanoribbon width number n, width wz, and lattice constants cz or ca are marke
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